photodiode ingaas apd time response characteristics compatible with sonet and g/ge-pon g8931-04 the g8931-04 is an ingaas apd that delivers a high-speed response of 2.5 gbps required for trunk line optical fiber communicati ons such as sonet (synchronous optical network), g-pon (gigabit-capable passive optical network) and ge-pon (gigabit ethernet-passive optic al network). features l high-speed response: 2.5 gbps l low dark current l low capacitance l active area: 0.04 mm l high sensitivity applications l optical fiber communications l high-speed data links 1 spectral response dark current vs. reverse voltage wavelength (?) photo sensitivity (a/w) 0 0.6 0.8 1.2 1.0 1.4 0.2 0.4 0.6 1.6 2.0 (typ. ta=25 ?c, m=1) 1.8 0.8 1.0 reverse voltage (v) dark current, photocurrent 1 pa 01020 10 pa 100 pa 1 na 10 na 100 na 30 50 (typ. ta=25 ? c) 40 1 a 10 a 1 ma 100 a photocurrent dark current general ratings parameter symbol value unit active area - 0.04 mm absolute maximum ratings parameter symbol value unit forward current i f 2 ma reverse current i r 2 ma operating temperature topr -40 to +85 c storage temperature ts tg -55 to +125 c electrical and optical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 0.95 to 1.7 - m peak sensitivity wavelength p - 1.55 - m photo sensitivity s =1.55 m, m=1 0.8 0.9 - a/w breakdown voltage v br i d =100 a 40 - 60 v temperature coefficient of v br -40 to +85 c - 0.11 0.16 v/c dark current i d v r =v br 0.9 - 40 65 na cut-off frequency fc m=10 3 4 - ghz terminal capacitance ct v r =v br 0.9 f=1 mhz - 0.35 0.45 pf kapdb0120ea kapdb0123ea
ingaas apd g8931-04 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 9 hamamatsu photonics k.k. cat. no. kapd1018e03 jan. 2009 dn 2 terminal capacitance vs. reverse voltage kapdb0124ea dimensional outline (unit: mm) kapda0034ea window 3.0 0.1 4.7 0.1 2.7 0.2 3.7 0.2 13 min. 5.4 0.2 0.45 lead case 2.5 0.2 photosensitive surface reverse voltage (v) terminal capacitance (pf) 0 1.0 2.0 0 1020304050 (typ. ta=25 ? c) 3.0 peripheral circuit example of apd bias supply voltage (for temperature compensation) current limitting resistance 0.1 f min. (as close to apd as possible) excessive voltage protective circuit apd + - readout circuit high-speed op amp kapdc0005ec
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